Research

From orbital and spin transport to quantum tunneling, my research uses first-principles electronic-structure and quantum-transport methods to understand and design low-power functional materials. Current efforts focus on orbitronics, altermagnetic spintronics, two-dimensional magnetic tunnel junctions, and nanoscale electron transport.

Orbital Hall Effect

My orbitronics research investigates how orbital angular momentum is generated, transported, and converted in crystalline solids. Combining first-principles calculations, Wannier interpolation, and Kubo-response theory, I connect crystal symmetry, magnetic order, spin–orbit coupling, and chemical doping to orbital and spin Hall responses. In RuO₂, we revealed coexisting OHE and SHE and showed that altermagnetism and Rh doping tune their relative magnitude and sign—including an orbital-dominant regime—opening a route to controllable orbital-current sources.

Representative publication: “Coexistence and Tunability of Orbital and Spin Hall Effects in RuO₂,” Physical Review Letters (2026).

Altermagnets

My research on altermagnetic spintronics explores spin-split transport in zero-net-magnetization materials. Electronic-structure and quantum-transport calculations reveal how bulk spin polarization, symmetry-selected tunneling channels, and atomic termination govern device performance. In KV₂Se₂O tunnel junctions, we demonstrated termination-preserved ultrahigh TMR across all interfaces; K termination passivates interface states and protects highly spin-polarized tunneling, establishing a robust design principle for altermagnetic memory devices.

Representative publication: “Termination-Preserved Ultrahigh Tunneling Magnetoresistance in Altermagnetic KV₂Se₂O,” ACS Nano 20, 18900–18910 (2026).

2D Magnetic Tunnel Junctions

I design heterojunctions with tailored magnetoelectric properties for high-performance information storage devices. I exploit interface science to improve the low efficiency of spin injection caused by lattice mismatch, physical science to switch the ferromagnetic and anti-ferromagnetic states without using an external magnetic field, and electronic engineering to functionalize the designed magnetic tunnel junctions' data reading and writing abilities. These designs make 2D materials unique advantages in magnetic tunnel junctions. And I give a fundamental understanding of spin-electron interactions and practical applications in MRAM, microwave oscillator, read head and so on. Check my publications below for more details:

Nanostructures and Electron Transport

I predict a number of new materials/structures that have potential for application in nanoelectronic devices. These devices that I construct demonstrate excellent electron transport and versatile properties. For example, I find and reveal that experimentally successful synthesized two-node hollow fullerene devices are highly sensitive and selective to greenhouse gas molecules and can be used for gas sensors. Check my publications below for more details:

Lead and Lead–Silicon Nanowires

I have used genetic algorithms, molecular dynamics, and density flooding theory to reveal the intrinsic connection between the geometry, electronic structure, and electron transport properties of Pb and PbSi nanowires. The influence of diameter and doping element ratio on the electron transport properties was also investigated. These provide a theoretical basis for the application of such nanowires in the design and preparation of Schottky transistors. Check my publications below for more details: